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Title: Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell

Single crystalline, two dimensional (2D) layered insulator hexagonal boron nitride (h-BN), is demonstrated as an emerging material candidate for surface passivation on mesoporous TiO{sub 2}. Cadmium selenide (CdSe) quantum dot based bulk heterojunction (BHJ) solar cell employed h-BN passivated TiO{sub 2} as an electron acceptor exhibits photoconversion efficiency ∼46% more than BHJ employed unpassivated TiO{sub 2}. Dominant interfacial recombination pathways such as electron capture by TiO{sub 2} surface states and recombination with hole at valence band of CdSe are efficiently controlled by h-BN enabled surface passivation, leading to improved photovoltaic performance. Highly crystalline, confirmed by transmission electron microscopy, dangling bond-free 2D layered h-BN with self-terminated atomic planes, achieved by chemical exfoliation, enables efficient passivation on TiO{sub 2}, allowing electronic transport at TiO{sub 2}/h-BN/CdSe interface with much lower recombination rate compared to an unpassivated TiO{sub 2}/CdSe interface.
Authors:
; ; ;  [1] ;  [2]
  1. College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203 (United States)
  2. Institute of Microelectronics and Optoelectronics, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22253817
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; BORON NITRIDES; CADMIUM SELENIDES; ELECTRON CAPTURE; HETEROJUNCTIONS; PASSIVATION; PHOTOVOLTAIC EFFECT; QUANTUM DOTS; RECOMBINATION; SOLAR CELLS; SURFACES; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY