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Title: Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al{sub 2}O{sub 3} and HfO{sub 2} films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al{sub 2}O{sub 3}/HfO{sub 2} stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.
Authors:
;  [1] ; ; ;  [2] ; ;  [2] ;  [3]
  1. Oak Ridge National Laboratory, Center for Nanophase Materials Sciences, Oak Ridge, Tennessee 37831 (United States)
  2. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22253813
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; DIELECTRIC MATERIALS; GRAPHENE; HAFNIUM OXIDES; LAYERS; MICROSCOPY; MICROWAVE RADIATION; NANOSTRUCTURES; PERYLENE; SILICON CARBIDES; SPATIAL RESOLUTION; THIN FILMS