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Title: The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes

We report on fabrication of suspended ∼15 nm thick GaN membranes nanoperforated in an ordered fashion using direct writing of negative charges by focused ion beam and subsequent photoelectrochemical etching of GaN epilayers. Both continuous and nanoperforated membranes exhibit persistent photoconductivity (PPC), which can be optically quenched under excitation by 546 nm radiation. Optical quenching of PPC occurs also under relatively intense intrinsic excitation of nanoperforated membranes by 355 nm radiation at T < 100 K. The proposed explanation is based on strong surface localization of charge carriers in nanoperforated membranes and UV-induced reactions occurring at surface states under intense intrinsic excitation.
Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [2] ;  [4] ; ; ; ;  [1] ;  [5]
  1. Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany)
  2. (Moldova, Republic of)
  3. National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of)
  4. School of Physics, University of New South Wales, Sydney NSW 2052 (Australia)
  5. Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of)
Publication Date:
OSTI Identifier:
22253798
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; ETCHING; EXCITATION; FABRICATION; GALLIUM NITRIDES; ION BEAMS; MEMBRANES; NANOSTRUCTURES; PHOTOCONDUCTIVITY; QUENCHING; SURFACES