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Title: Temperature dependence of diffusion length, lifetime and minority electron mobility in GaInP

The mobility of electrons in double heterostructures of p-type Ga{sub 0.50}In{sub 0.50}P has been determined by measuring minority carrier diffusion length and lifetime. The minority electron mobility increases monotonically from 300 K to 5 K, limited primarily by optical phonon and alloy scattering. Comparison to majority electron mobility over the same temperature range in comparably doped samples shows a significant reduction in ionized impurity scattering at lower temperatures, due to differences in interaction of repulsive versus attractive carriers with ionized dopant sites. These results should be useful in modeling and optimization for multi-junction solar cells and other optoelectronic devices.
Authors:
;  [1] ; ; ;  [2] ; ; ; ; ; ;  [3]
  1. Physics Department, Naval Postgraduate School, Monterey, California 93943 (United States)
  2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  3. Solar Junction, Inc., San Jose, California 95131 (United States)
Publication Date:
OSTI Identifier:
22253795
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; CARRIERS; CONNECTORS; DIFFUSION LENGTH; DOPED MATERIALS; ELECTRIC CONTACTS; ELECTRON MOBILITY; ELECTRONS; LIFETIME; PHONONS; SCATTERING; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SUPERCONDUCTING JUNCTIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE