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Title: Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process

We present the facile dry transfer of graphene synthesized via chemical vapor deposition on copper film to a functional device substrate. High quality uniform dry transfer of graphene to oxidized silicon substrate was achieved by exploiting the beneficial features of a poly(4-vinylphenol) adhesive layer involving a strong adhesion energy to graphene and negligible influence on the electronic and structural properties of graphene. The graphene field effect transistors (FETs) fabricated using the dry transfer process exhibit excellent electrical performance in terms of high FET mobility and low intrinsic doping level, which proves the feasibility of our approach in graphene-based nanoelectronics.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Department of Electrical Engineering, Graphene Research Center, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
  2. Department of Mechanical Engineering, Graphene Research Center, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22253786
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADHESION; ADHESIVES; CHEMICAL VAPOR DEPOSITION; COPPER; EQUIPMENT; FIELD EFFECT TRANSISTORS; FILMS; GRAPHENE; LAYERS; MOBILITY; SILICON; SUBSTRATES