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Title: Ge doped GaN with controllable high carrier concentration for plasmonic applications

Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 10{sup 20} cm{sup −3}. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm{sup −1} and a surface plasma with an energy around 2000 cm{sup −1}. These findings open possibilities for the application of highly doped GaN for plasmonic devices.
Authors:
; ; ; ; ; ; ; ;  [1] ; ;  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)
  2. Institut fűr Festkörperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)
Publication Date:
OSTI Identifier:
22253777
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABUNDANCE; CARRIERS; DOPED MATERIALS; ELECTRONS; ELLIPSOMETRY; EQUIPMENT; GALLIUM NITRIDES; LUMINESCENCE; PLASMA; RENORMALIZATION; SPECTRA; SURFACES