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Title: Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

Structural investigations of hydrogenated epitaxial graphene grown on SiC(0001) are presented. It is shown that hydrogen plays a dual role. In addition to contributing to the well-known removal of the buffer layer, it goes between the graphene planes, resulting in an increase of the interlayer spacing to 3.6 Å–3.8 Å. It is explained by the intercalation of molecular hydrogen between carbon planes, which is followed by H{sub 2} dissociation, resulting in negatively charged hydrogen atoms trapped between the graphene layers, with some addition of covalent bonding to carbon atoms. Negatively charged hydrogen may be responsible for p-doping observed in hydrogenated multilayer graphene.
Authors:
; ;  [1] ; ; ;  [2] ;  [1] ;  [3] ;  [1] ;  [3]
  1. Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw (Poland)
  2. Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw (Poland)
  3. (Poland)
Publication Date:
OSTI Identifier:
22253776
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; BUFFERS; EPITAXY; GRAPHENE; HYDROGEN; HYDROGENATION; LAYERS; SILICON CARBIDES