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Title: Atomic layer deposition of Al{sub 2}O{sub 3} on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment

GeSn is quickly emerging as a potential candidate for high performance Si-compatible transistor technology. Fabrication of high-ĸ gate stacks on GeSn with good interface properties is essential for realizing high performance field effect transistors based on this material system. We demonstrate an effective surface passivation scheme for n-Ge{sub 0.97}Sn{sub 0.03} alloy using atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. The effect of pre-ALD wet chemical surface treatment is analyzed and shown to be critical in obtaining a good quality interface between GeSn and Al{sub 2}O{sub 3}. Using proper surface pre-treatment, mid-gap trap density for the Al{sub 2}O{sub 3}/GeSn interface of the order of 10{sup 12} cm{sup −2} has been achieved.
Authors:
; ; ;  [1]
  1. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22253773
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; ALUMINIUM OXIDES; DENSITY; FABRICATION; FIELD EFFECT TRANSISTORS; GERMANIUM; INTERFACES; PASSIVATION; PERFORMANCE; SURFACE TREATMENTS; SURFACES; TIN