skip to main content

SciTech ConnectSciTech Connect

Title: InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency

An InAs/GaAs quantum dot infrared photodetector (QDIP) based on p-type valence-band intersublevel hole transitions as opposed to conventional electron transitions is reported. Two response bands observed at 1.5–3 and 3–10 μm are due to transitions from the heavy-hole to spin-orbit split-off QD level and from the heavy-hole to heavy-hole level, respectively. Without employing optimized structures (e.g., the dark current blocking layer), the demonstrated QDIP displays promising characteristics, including a specific detectivity of 1.8×10{sup 9} cm·Hz{sup 1/2}/W and a quantum efficiency of 17%, which is about 5% higher than that of present n-type QDIPs. This study shows the promise of utilizing hole transitions for developing QDIPs.
Authors:
; ;  [1] ; ; ;  [2] ; ; ; ;  [3]
  1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)
  2. Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)
  3. Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)
Publication Date:
OSTI Identifier:
22253772
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; DEPLETION LAYER; ELECTRONS; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; QUANTUM DOTS; QUANTUM EFFICIENCY; SPIN