skip to main content

Title: Effects of Nb doping level on the electronic transport, photoelectric effect and magnetoresistance across La{sub 0.5}Ca{sub 0.5}MnO{sub 3}/Nb:SrTiO{sub 3} junctions

Heterojunctions composed of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} and Nb doped SrTiO{sub 3} were fabricated, and the effects of the Nb doping level on their electronic transport, photoelectric effect, and magnetoresistance were investigated. A lower doping concentration of Nb led to better rectifying properties and higher open circuit voltages. The I-V curves for La{sub 0.5}Ca{sub 0.5}MnO{sub 3}/0.7 wt. % Nb-SrTiO{sub 3} showed a negligible response to magnetic fields for all temperatures, whereas La{sub 0.5}Ca{sub 0.5}MnO{sub 3}/0.05 wt. % Nb-SrTiO{sub 3} exhibited distinct magnetoresistance, which depended on both the bias voltage and temperature. These results are discussed with the assistance of conventional semiconductor theories.
Authors:
 [1] ;  [2] ; ;  [1] ;  [3]
  1. Department of Physics, The University of Hong Kong, Pokfulam Road (Hong Kong)
  2. (China)
  3. College of Science, China Jiliang University, Hangzhou, Zhejiang 310018 (China)
Publication Date:
OSTI Identifier:
22253750
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTRIC POTENTIAL; HETEROJUNCTIONS; MAGNETORESISTANCE; PHOTOELECTRIC EFFECT; SEMICONDUCTOR MATERIALS; STRONTIUM TITANATES