Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4836955· OSTI ID:22253736

Ma, Alex M.; Gupta, Manisha; Shoute, Gem; Tsui, Ying Y.; Afshar, Amir; Cadien, Kenneth C. ^[1]

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1. Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)

We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-κ HfO{sub 2} dielectric utilized are both grown by atomic layer deposition at temperatures less than 130 °C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91 V, electron mobility of 3.9 cm{sup 2} V{sup −1} s{sup −1}, and low subthreshold swing of 192 mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20 V) with low output conductances.

• OSTI ID: 22253736
• Journal Information: Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BREAKDOWN
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRON MOBILITY
EQUIPMENT
HAFNIUM OXIDES
THIN FILMS
TRANSISTORS
ZINC OXIDES