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Title: Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition

We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-κ HfO{sub 2} dielectric utilized are both grown by atomic layer deposition at temperatures less than 130 °C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91 V, electron mobility of 3.9 cm{sup 2} V{sup −1} s{sup −1}, and low subthreshold swing of 192 mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20 V) with low output conductances.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)
  2. Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)
Publication Date:
OSTI Identifier:
22253736
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BREAKDOWN; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; EQUIPMENT; HAFNIUM OXIDES; THIN FILMS; TRANSISTORS; ZINC OXIDES