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Title: Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm{sup 2}) when operated at a current density of 20 A/cm{sup 2}.
Authors:
; ; ; ; ; ;  [1] ; ;  [2]
  1. Institute of Photonics, SUPA, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom)
  2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
Publication Date:
OSTI Identifier:
22253735
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ACCURACY; ALUMINIUM; CURRENT DENSITY; GALLIUM NITRIDES; INDIUM; LIGHT EMITTING DIODES; NANOSTRUCTURES; SUBSTRATES