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Title: Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells

The photoluminescence quantum efficiencies of a series of Ga(N,As,P)/GaP multiple quantum wells are analyzed. The external quantum efficiencies are derived from the absorbed and the emitted light intensities measured using an integrating sphere mounted inside a closed-cycle helium cryostat. By taking into account the device layer sequences as well as internal reflections and reabsorption, the internal quantum efficiencies yield values above 90% for all samples at cryogenic temperatures. The temperature-dependence of the quantum efficiencies as a function of active quantum well layer design reveal the internal interfaces as remaining growth challenge in these heterostructures.
Authors:
; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Faculty of Physics and Material Sciences Center, Philipps-Universit├Ąt Marburg, Renthof 5, D-35032 Marburg (Germany)
  2. NAsP III/V GmbH, Am Knechtacker 19, D-35041 Marburg (Germany)
  3. (Germany)
Publication Date:
OSTI Identifier:
22253733
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CRYOSTATS; DESIGN; GALLIUM PHOSPHIDES; HELIUM; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; QUANTUM WELLS; REFLECTION; TEMPERATURE DEPENDENCE