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Title: Subcutaneous oxidation of In{sub 0.53}Ga{sub 0.47}As(100) through ultra-thin atomic layer deposited Al{sub 2}O{sub 3}

Stability of oxide/semiconductor interfaces during device fabrication is critically important, particularly for adoption of new semiconductor channel materials, such as III-V compounds. Unintentional oxidation of an underlying In{sub 0.53}Ga{sub 0.47}As(100) surface through atomic layer deposited (ALD) Al{sub 2}O{sub 3} layers of varying thickness is investigated. Oxygen annealing of 1 ∼ 2 nm thickness Al{sub 2}O{sub 3} layers at 300 °C or higher and large-dose water vapor exposure during the ALD-Al{sub 2}O{sub 3} process at 300 °C produces InGaAs surface oxidation. This subcutaneous oxidation of InGaAs increases the Al{sub 2}O{sub 3}/InGaAs interface defect density as observed in suppressed band-edge photoluminescence and in capacitance-voltage analysis, possibly by creating As dangling bonds at the InGaAs surface.
Authors:
;  [1]
  1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22253730
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; ANNEALING; CAPACITANCE; DEPOSITION; ELECTRIC POTENTIAL; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; OXIDATION; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; THICKNESS; WATER VAPOR