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Title: High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics.
Authors:
; ;  [1]
  1. Institut d'Électronique Fondamentale, Université Paris-Sud CNRS UMR 8622 Bat. 220, Centre scientifique d'Orsay, 91405 Orsay (France)
Publication Date:
OSTI Identifier:
22253729
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTALS; LIQUIDS; NONLINEAR OPTICS; QUALITY FACTOR; SILICON; SPECTRA; TRANSMISSION; VISIBLE RADIATION; WAVEGUIDES; WAVELENGTHS