High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4852775· OSTI ID:22253729

Caër, Charles; Le Roux, Xavier; Cassan, Eric ^[1]

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1. Institut d'Électronique Fondamentale, Université Paris-Sud CNRS UMR 8622 Bat. 220, Centre scientifique d'Orsay, 91405 Orsay (France)

We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics.

• OSTI ID: 22253729
• Journal Information: Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTALS
LIQUIDS
NONLINEAR OPTICS
QUALITY FACTOR
SILICON
SPECTRA
TRANSMISSION
VISIBLE RADIATION
WAVEGUIDES
WAVELENGTHS