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Title: Graphene surface emitting terahertz laser: Diffusion pumping concept

We suggest a concept of a tunable graphene-based terahertz (THz) surface emitting laser with diffusion pumping. We employ significant difference in the electronic energy gap of graphene and a typical wide-gap semiconductor, and demonstrate that carriers generated in the semiconductor can be efficiently captured by graphene resulting in population inversion and corresponding THz lasing from graphene. We develop design principles for such a laser and estimate its performance. We predict up to 50 W/cm{sup 2} terahertz power output for 100 kW/cm{sup 2} pump power at frequency around 10 THz at room temperature.
Authors:
 [1] ; ;  [2] ; ;  [3]
  1. Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, Saratov 410019, Russia and Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)
  2. Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, Saratov 410019 (Russian Federation)
  3. Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Miyagi 980-8577 (Japan)
Publication Date:
OSTI Identifier:
22253727
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPTURE; CARRIERS; DESIGN; DIFFUSION; ENERGY GAP; GRAPHENE; LASERS; PERFORMANCE; POPULATION INVERSION; PUMPING; SEMICONDUCTOR MATERIALS; SURFACES; TEMPERATURE RANGE 0273-0400 K