Evaluation of photovoltaic materials within the Cu-Sn-S family

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4851896· OSTI ID:22253718

Zawadzki, Pawel; Peng, Haowei; Ginley, David S.; Tumas, W.; Zakutayev, Andriy; Lany, Stephan ^[1]; Baranowski, Lauryn L.; Toberer, Eric S. ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Next-generation thin film solar cell technologies require earth abundant photovoltaic absorber materials. Here we demonstrate an alternative approach to design of such materials, evaluating candidates grouped by constituent elements rather than underlying crystal structures. As an example, we evaluate thermodynamic stability, electrical transport, electronic structure, optical and defect properties of Cu-Sn-S candidates using complementary theory and experiment. We conclude that Cu{sub 2}SnS{sub 3} avoids many issues associated with the properties of Cu{sub 4}SnS{sub 4}, Cu{sub 4}Sn{sub 7}S{sub 16}, and other Cu-Sn-S materials. This example demonstrates how this element-specific approach quickly identifies potential problems with less promising candidates and helps focusing on the more promising solar cell absorbers.

• OSTI ID: 22253718
• Journal Information: Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CRYSTAL STRUCTURE
DESIGN
ELECTRONIC STRUCTURE
MATERIALS
PHOTOVOLTAIC EFFECT
SOLAR CELLS
THIN FILMS