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Title: Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height

In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58‚ÄČeV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.
Authors:
; ; ; ; ; ; ;  [1]
  1. Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)
Publication Date:
OSTI Identifier:
22253716
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; BUILDUP; DIFFUSION BARRIERS; FILMS; INTERFACES; LAYERS; NICKEL; SILICA; SILICON OXIDES; VACANCIES