Stochastic memristive nature in Co-doped CeO{sub 2} nanorod arrays
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)
In this Letter, bipolar resistive switching characteristics of electrochemically deposited pure and Cobalt doped CeO{sub 2} nanorods architectures were reported. A conducting filament based model to address resistive switching process in these devices was proposed. Furthermore, the randomness in individual switching events and the prediction of switching probabilities were studied by imposing weak programming conditions. The present study offers insights into scrutinize the inherent stochastic nature in resistive switching characteristics within these devices rather than stressfully achieve high switching probabilities using excess voltage or time.
- OSTI ID:
- 22253715
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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