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Title: Stochastic memristive nature in Co-doped CeO{sub 2} nanorod arrays

In this Letter, bipolar resistive switching characteristics of electrochemically deposited pure and Cobalt doped CeO{sub 2} nanorods architectures were reported. A conducting filament based model to address resistive switching process in these devices was proposed. Furthermore, the randomness in individual switching events and the prediction of switching probabilities were studied by imposing weak programming conditions. The present study offers insights into scrutinize the inherent stochastic nature in resistive switching characteristics within these devices rather than stressfully achieve high switching probabilities using excess voltage or time.
Authors:
; ;  [1]
  1. School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)
Publication Date:
OSTI Identifier:
22253715
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CERIUM OXIDES; COBALT; DEPOSITS; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; EQUIPMENT; FILAMENTS; FORECASTING; NANOSTRUCTURES; PROBABILITY; STOCHASTIC PROCESSES