The electron-phonon relaxation time in thin superconducting titanium nitride films

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4851235· OSTI ID:22253712

Finkel, M.; Kovalyuk, V.; An, P. ^[1]; Morozov, D.; Dunscombe, C.; Mauskopf, P. ^[2]; Tarkhov, M. ^[3]; Klapwijk, T. M. ^[1]; Goltsman, G. ^[1]

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1. Physics Department, Moscow State Pedagogical University, Moscow 119991 (Russian Federation)
2. School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA (United Kingdom)
3. National Research Centre, “Kurchatov Institute,” Moscow 123128 (Russian Federation)

We report on the direct measurement of the electron-phonon relaxation time, τ{sub eph}, in disordered TiN films. Measured values of τ{sub eph} are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T{sup −3} temperature dependence. The electronic density of states at the Fermi level N{sub 0} is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

• OSTI ID: 22253712
• Journal Information: Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRONS
FERMI LEVEL
FILMS
PHONONS
RELAXATION TIME
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TITANIUM
TITANIUM NITRIDES