Doping mechanisms in graphene-MoS{sub 2} hybrids
- I. Institut für Theoretische Physik, Universität Hamburg, Jungiusstraße 9, D-20355 Hamburg (Germany)
- School of Physics and Astronomy, University of Manchester, M13 9PL Manchester (United Kingdom)
- Institut für Theoretische Physik, Universität Bremen, Otto-Hahn-Allee 1, D-28359 Bremen (Germany)
- Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL (United Kingdom)
- Institute for Molecules and Materials, Radboud University of Nijmegen, Heijendaalseweg 135, 6525 AJ Nijmegen (Netherlands)
We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer molybdenum disulfide (MoS{sub 2}). From first-principles simulations, we find electron doping of graphene due to the presence of rhenium impurities in MoS{sub 2}. Furthermore, we show that MoS{sub 2} edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS{sub 2} hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample.
- OSTI ID:
- 22253691
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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