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Title: Impact of transparent electrode on photoresponse of ZnO-based phototransistor

ZnO-based photo-thin film transistors with enhanced photoresponse were developed using transparent conductive oxide contacts. Changing the electrode from opaque Mo to transparent In-Zn-O increases the photocurrent by five orders of magnitude. By changing the opacity of each source and drain electrode, we could observe how the photoresponse is affected. We deduce that the photocurrent generation mechanism is based on an energy band change due to the photon irradiation. More importantly, we reveal that the photocurrent is determined by the energy barrier of injected electrons at the interface between the source electrode and the active layer.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Advanced Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Yongin-Si, Gyeonggi-Do 446-712 (Korea, Republic of)
  2. Department of Display and Semiconductor Physics and Department of Applied Physics, Korea University, 2511, Sejongro, Sejong, 339–700 (Korea, Republic of)
  3. Analytical Science Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Yongin-Si, Gyeonggi-Do 446-712 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22253688
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRODES; ELECTRONS; IRRADIATION; OPACITY; PHOTONS; THIN FILMS; TRANSISTORS; ZINC OXIDES