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Title: Selective charge doping of chemical vapor deposition-grown graphene by interface modification

Abstract

The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11} cm{sup −2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

Authors:
; ; ; ; ;  [1]
  1. NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)
Publication Date:
OSTI Identifier:
22253681
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; GRAPHENE; P-N JUNCTIONS; SILANES; SILICA; SILICON OXIDES; SUBSTRATES

Citation Formats

Wang, Shengnan, Suzuki, Satoru, Furukawa, Kazuaki, Orofeo, Carlo M., Takamura, Makoto, and Hibino, Hiroki. Selective charge doping of chemical vapor deposition-grown graphene by interface modification. United States: N. p., 2013. Web. doi:10.1063/1.4851915.
Wang, Shengnan, Suzuki, Satoru, Furukawa, Kazuaki, Orofeo, Carlo M., Takamura, Makoto, & Hibino, Hiroki. Selective charge doping of chemical vapor deposition-grown graphene by interface modification. United States. https://doi.org/10.1063/1.4851915
Wang, Shengnan, Suzuki, Satoru, Furukawa, Kazuaki, Orofeo, Carlo M., Takamura, Makoto, and Hibino, Hiroki. 2013. "Selective charge doping of chemical vapor deposition-grown graphene by interface modification". United States. https://doi.org/10.1063/1.4851915.
@article{osti_22253681,
title = {Selective charge doping of chemical vapor deposition-grown graphene by interface modification},
author = {Wang, Shengnan and Suzuki, Satoru and Furukawa, Kazuaki and Orofeo, Carlo M. and Takamura, Makoto and Hibino, Hiroki},
abstractNote = {The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11} cm{sup −2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.},
doi = {10.1063/1.4851915},
url = {https://www.osti.gov/biblio/22253681}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 103,
place = {United States},
year = {Mon Dec 16 00:00:00 EST 2013},
month = {Mon Dec 16 00:00:00 EST 2013}
}