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Title: Selective charge doping of chemical vapor deposition-grown graphene by interface modification

The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11} cm{sup −2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.
Authors:
; ; ; ; ;  [1]
  1. NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)
Publication Date:
OSTI Identifier:
22253681
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; GRAPHENE; P-N JUNCTIONS; SILANES; SILICA; SILICON OXIDES; SUBSTRATES