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Title: Bottom-up graphene nanoribbon field-effect transistors

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nano-scale chemically synthesized GNR field-effect transistors, made possible by development of a reliable layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1 nm width GNRs.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ; ;  [3] ;  [2] ;  [3] ;  [5] ;  [6] ;  [6] ;  [2] ;  [4] ;  [2]
  1. Applied Science and Technology, University of California, Berkeley, California 94720 (United States)
  2. (United States)
  3. Department of Physics, University of California, Berkeley, California 94720 (United States)
  4. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
  5. (Spain)
  6. Department of Chemistry, University of California, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22253680
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRONIC EQUIPMENT; FIELD EFFECT TRANSISTORS; GRAPHENE; NANOSTRUCTURES; SENSITIVITY; SYNTHESIS