skip to main content

SciTech ConnectSciTech Connect

Title: Intersublevel dephasing in InAs/GaAs quantum dots below the Reststrahlen band

Using transient four-wave mixing in the terahertz range, we have measured the s-p inter-sublevel dephasing time in self-assembled InAs/GaAs quantum dots for transition energies below the Reststrahlen band. Dephasing times of up to 600 ps at a photon energy of 18 meV have been determined. By comparing pump-probe and four-wave mixing measurements, we show that there is no significant influence of any pure dephasing process at low temperature. The linear temperature dependence is consistent with acoustic phonon scattering.
Authors:
; ;  [1] ;  [2] ; ;  [1] ;  [3]
  1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)
  2. (Germany)
  3. Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom)
Publication Date:
OSTI Identifier:
22253678
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; FREQUENCY MIXING; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHONONS; PHOTONS; PROBES; QUANTUM DOTS; SCATTERING; TEMPERATURE DEPENDENCE; TRANSIENTS