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Title: In situ tuning the single photon emission from single quantum dots through hydrostatic pressure

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4856755· OSTI ID:22253677
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  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

We demonstrate that exciton emission wavelength in InAs/GaAs quantum dots (QDs) can be shifted up to 160 nm using hydrostatic pressure (0.4–4 GPa) in situ in an optical cryostat through an improved diamond anvil cell driven by piezoelectric actuator. It is confirmed that the high pressure does not destroy the photon anti-bunching properties of single QD emitter. Exciton emission intensity is not obviously weakened under the pressure range of 0–4 GPa. Such a tunable QD single photon emitter enables a flexibly tuned source for quantum optical experiments.

OSTI ID:
22253677
Journal Information:
Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English