skip to main content

Title: Intensive two-photon absorption induced decay pathway in a ZnO crystal: Impact of light-induced defect state

Using the pump-probe with phase object technique with 20 ps laser pulses at 532 nm, we investigated the carrier relaxation process subsequent to two-photon absorption (TPA) in ZnO. As a result, we found that an additional subnanosecond decay pathway is activated when the pump beam intensity surpasses 0.4 GW/cm{sup 2}. We attributed this intensity-dependent pathway to a TPA induced bulk defect state and our results demonstrate that this photo induced defect state has potential applications in ZnO based optoelectronic and spintronic devices.
Authors:
;  [1] ;  [2] ;  [1] ;  [3]
  1. Department of Physics, Harbin Institute of Technology, Harbin 15001 (China)
  2. School of Physical Science and Technology, Soochow University, Suzhou 215006 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22253676
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; CRYSTALS; DECAY; LASERS; PHOTONS; RELAXATION; ZINC OXIDES