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Title: Characterization of SiGe/Si multi-quantum wells for infrared sensing

SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (2–2500 × 10{sup −9} Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10 nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.
Authors:
; ; ;  [1] ;  [2]
  1. School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden)
  2. School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)
Publication Date:
OSTI Identifier:
22253674
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DESIGN; EPITAXY; GERMANIUM SILICIDES; OXYGEN; PERFORMANCE; QUANTUM WELLS; SENSITIVITY; STRAINS; TEMPERATURE COEFFICIENT; THICKNESS