Effects of roughness and temperature on low-energy hydrogen positive and negative ion reflection from silicon and carbon surfaces
Journal Article
·
· Review of Scientific Instruments
- Graduate School of Science and Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan)
- National Institute for Fusion Science, Toki, Gifu 509-5292 (Japan)
- Tokushima Bunri University, Yamashiro, Tokushima 770-8514 (Japan)
- Faculty of Life and Medical Sciences, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan)
- School of Engineering, Tohoku University, Aoba, Sendai, Miyagi 980-8579 (Japan)
- Organization for Research Initiatives and Development, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan)
- RIKEN SPring-8 Center, Mikazuki, Sayo, Hyogo 679-5148 (Japan)
Angle-resolved energy distribution functions of positive and negative hydrogen ions produced from a rough-finished Si surface under 1 keV proton irradiation have been measured. The corresponding distribution from a crystalline surface and a carbon surface are also measured for comparison. Intensities of positive and negative ions from the rough-finished Si are substantially smaller than those from crystalline Si. The angular distributions of these species are broader for rough surface than the crystalline surface. No significant temperature dependence for positive and negative ion intensities is observed for all samples in the temperature range from 300 to 400 K.
- OSTI ID:
- 22253657
- Journal Information:
- Review of Scientific Instruments, Vol. 85, Issue 2; Conference: ICIS 2011: 14. international conference on ion sources, Giardini-Naxos, Sicily (Italy), 12-16 Sep 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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