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Title: Multi-cusp ion source for doping process of flat panel display manufacturing

We developed a multi-cusp ion source for Nissin ion doping system iG5 which is used in low temperature poly-crystalline silicon processes for flat panel display (FPD) manufacturing. In this ion source, BF{sub 3} or PH{sub 3} diluted H{sub 2} plasmas are produced and large area ribbon ion beams are extracted. In general, ion ratio of B{sup +} in BF{sub 3} plasma is much smaller than BF{sub 2}{sup +} in multi-cusp ion sources. We developed a new method to increase B{sup +} ratio and obtained mass analyzed B{sup +} target current of 130 mA. We employed newly improved multi-slot type electrodes for the beam extraction system and obtained stable beams with the uniformity of below 3%. In BF{sub 3} plasmas, several undesirable metal fluorides are produced in the plasma chamber and deposited on the electrode system, which cause glitches and poor beam uniformity. We introduce several cleaning methods.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. FPD Machine Business Center, Nissin Ion Equipment Co., Ltd., Shiga 528-0068 (Japan)
Publication Date:
OSTI Identifier:
22253611
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 85; Journal Issue: 2; Conference: ICIS 2011: 14. international conference on ion sources, Giardini-Naxos, Sicily (Italy), 12-16 Sep 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BEAMS; BORON FLUORIDES; BORON IONS; CUSPED GEOMETRIES; HYDROGEN; ION SOURCES; MANUFACTURING; PANELS; PHOSPHORUS HYDRIDES; PLASMA; SILICON