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Title: High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Two high-k dielectric materials (Al{sub 2}O{sub 3} and HfO{sub 2}) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (D{sub it}). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al{sub 2}O{sub 3} and HfO{sub 2}) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO{sub 2} and Al{sub 2}O{sub 3} MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (D{sub it}) profiles show D{sub it} minima of 6.1 × 10{sup 12}/6.5 × 10{sup 12} and 6.6 × 10{sup 12}/7.3 × 10{sup 12} cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3} and HfO{sub 2}, respectively for (100) and (110) InAs surfaces. The similar interface trap density (D{sub it}) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFETmore » device with both (100) and (110) surface channel orientations present.« less
Authors:
;  [1] ; ; ; ; ; ;  [2] ; ; ; ; ; ; ;  [3] ; ; ;  [4] ;  [5]
  1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
  2. TSMC, Kapeldreef 75, 3001 Leuven (Belgium)
  3. TSMC, 168 Park Ave. 2, Hsinchu Science Park, Hsinchu, Taiwan 300 (China)
  4. Lund University, Box 118, 22100 Lund (Sweden)
  5. Ingram School of Engineering, Texas State University, San Marcos, TX 78666 (United States)
Publication Date:
OSTI Identifier:
22253280
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 4; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DENSITY; DEPOSITION; DEPOSITS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; HAFNIUM OXIDES; INDIUM ARSENIDES; SEMICONDUCTOR MATERIALS; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY