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Title: p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.
Authors:
; ; ; ; ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [3] ;  [1] ;  [2] ;  [4] ;  [4]
  1. LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore)
  2. (Singapore)
  3. (China)
  4. (Turkey)
Publication Date:
OSTI Identifier:
22253264
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRONS; GALLIUM NITRIDES; HOLES; LIGHT EMITTING DIODES; ORGANOMETALLIC COMPOUNDS; QUANTUM WELLS