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Title: Optical and structural characterization of nitrogen-rich InN: Transition from nearly intrinsic to strongly n-type degenerate with temperature

We report on a detailed study of the structural and optical properties of nonstoichiometric nitrogen-rich InN grown on sapphire substrates, by migration enhanced afterglow deposition. The samples were polycrystalline, with the presence of InN dots. Unusually strong photoluminescence emission was measured at cryogenic temperatures, with the peak energy at ∼0.68 eV. Detailed analysis further shows that the sample has very low residual electron density in the range of ∼10{sup 16} cm{sup −3} at temperatures below 20 K.
Authors:
; ; ; ;  [1] ; ; ;  [2] ;  [3]
  1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)
  2. Department of Physics, McGill University, 3600 University Street, Montreal, Quebec H3A 2T8 (Canada)
  3. Meaglow Ltd., 1308 Piccard Avenue, Thunder Bay, P7G 1A7 Ontario (Canada)
Publication Date:
OSTI Identifier:
22253257
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AFTERGLOW; DEPOSITION; ELECTRON DENSITY; INDIUM NITRIDES; NITROGEN; OPTICAL PROPERTIES; PEAKS; PHOTOLUMINESCENCE; POLYCRYSTALS; SAPPHIRE; SUBSTRATES