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Title: Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots

We report enhanced sensitization of silicon through nonradiative energy transfer (NRET) of the excitons in an energy-gradient structure composed of a cascaded bilayer of green- and red-emitting CdTe quantum dots (QDs) on bulk silicon. Here NRET dynamics were systematically investigated comparatively for the cascaded energy-gradient and mono-dispersed QD structures at room temperature. We show experimentally that NRET from the QD layer into silicon is enhanced by 40% in the case of an energy-gradient cascaded structure as compared to the mono-dispersed structures, which is in agreement with the theoretical analysis based on the excited state population-depopulation dynamics of the QDs.
Authors:
; ;  [1] ; ;  [1] ;  [2]
  1. Department of Physics and Department of Electrical and Electronics Engineering, UNAM—Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey)
  2. (Singapore)
Publication Date:
OSTI Identifier:
22253254
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CADMIUM TELLURIDES; ENERGY TRANSFER; EXCITED STATES; EXCITONS; LAYERS; QUANTUM DOTS; SILICON; TEMPERATURE RANGE 0273-0400 K