Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots

Journal Article · Mon Dec 23 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4858384· OSTI ID:22253254

Yeltik, Aydan; Guzelturk, Burak; Akhavan, Shahab ^[1]; Ludwig Hernandez-Martinez, Pedro

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1. Department of Physics and Department of Electrical and Electronics Engineering, UNAM—Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey)

We report enhanced sensitization of silicon through nonradiative energy transfer (NRET) of the excitons in an energy-gradient structure composed of a cascaded bilayer of green- and red-emitting CdTe quantum dots (QDs) on bulk silicon. Here NRET dynamics were systematically investigated comparatively for the cascaded energy-gradient and mono-dispersed QD structures at room temperature. We show experimentally that NRET from the QD layer into silicon is enhanced by 40% in the case of an energy-gradient cascaded structure as compared to the mono-dispersed structures, which is in agreement with the theoretical analysis based on the excited state population-depopulation dynamics of the QDs.

• OSTI ID: 22253254
• Journal Information: Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CADMIUM TELLURIDES
ENERGY TRANSFER
EXCITED STATES
EXCITONS
LAYERS
QUANTUM DOTS
SILICON
TEMPERATURE RANGE 0273-0400 K