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Title: Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well

It is known that due to the formation of in-plane local energy barrier, V-defects can screen the carriers which non-radiatively recombine in threading dislocations (TDs) and hence, enhance the internal quantum efficiency in GaN based light-emitting diodes. By a theoretical modeling capable of describing the inhomogeneous carrier distribution near the V-defect in GaN based quantum wells, we show that the efficient suppression of non-radiative (NR) recombination via TD requires the local energy barrier height of V-defect larger than ∼80 meV. The NR process in TD combined with V-defect influences the quantum efficiency mainly in the low injection current density regime suitably described by the linear dependence of carrier density. We provide a simple phenomenological expression for the NR recombination rate based on the model result.
Authors:
; ; ;  [1] ; ; ;  [2] ;  [3]
  1. Computational Science Group, CAS Center, SAIT, Samsung Electronics, Nongsuh-dong, Giheung-gu, Yongin-si, Kyeonggi-do 446-712 (Korea, Republic of)
  2. GaN Device Group, Advanced Device Lab, SAIT, Samsung Electronics, Nongsuh-dong, Giheung-gu, Yongin-si, Kyeonggi-do 446-712 (Korea, Republic of)
  3. Department of Physics and Semiconductor Science, Catholic University of Daegu, Hayang, Kyeongbuk (Korea, Republic of)
Publication Date:
OSTI Identifier:
22253253
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER DENSITY; CARRIERS; CURRENT DENSITY; DISLOCATIONS; GALLIUM NITRIDES; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; QUANTUM WELLS