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Title: Tomographic investigation of fermi level pinning at focused ion beam milled semiconductor surfaces

Electron holography in the transmission electron microscope (TEM) offers the spatial and signal resolution for studying effects like Fermi level pinning or dopant concentration variations important for the design of modern electronic devices. To overcome the loss of information along the projection direction, surface effects, and surface damage due to TEM specimen preparation, we apply electron holographic tomography to analyze the 3D potential distribution of semiconductor samples prepared by focused-ion-beam. We observe mid-band gap pinning of the Fermi level at Si surfaces but valence band pinning at Ge surfaces. The pinning extends over tens of nanometers into the bulk.
Authors:
; ; ; ;  [1]
  1. Triebenberg Laboratory, Institute of Structure Physics, Technische Universit├Ąt Dresden, 01062 Dresden (Germany)
Publication Date:
OSTI Identifier:
22253219
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRONIC EQUIPMENT; ELECTRONS; FERMI LEVEL; HOLOGRAPHY; ION BEAMS; SEMICONDUCTOR MATERIALS; SURFACES; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY