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Title: Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes.
Authors:
 [1] ;  [2] ;  [3] ; ;  [1] ;  [1] ;  [2]
  1. Solar Energy Research Institute of Singapore, National University of Singapore, Singapore, Singapore 117574 (Singapore)
  2. (Singapore)
  3. Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstr. 2, D-79110 Freiburg (Germany)
Publication Date:
OSTI Identifier:
22253209
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BEAMS; DENSITY; DOPED MATERIALS; LASERS; PULSES; SEMICONDUCTOR MATERIALS; SILICON