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Title: Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E{sub −} conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E{sub +} and the E{sub −} conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.
Authors:
; ; ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [2]
  1. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
  2. Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan)
  3. (JST), Kawaguchi, Saitama 332-0012 (Japan)
  4. Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)
Publication Date:
OSTI Identifier:
22253207
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; AUGMENTATION; CARRIER LIFETIME; ELECTRONS; PHOTOLUMINESCENCE; RECOMBINATION; RED SHIFT; RELAXATION; SPECTROSCOPY; TIME RESOLUTION; ZINC TELLURIDES