Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

Journal Article · Mon Dec 23 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4858968· OSTI ID:22253207

Lin, Yan-Cheng; Tasi, Ming-Jui; Chou, Wu-Ching; Chang, Wen-Hao; Chen, Wei-Kuo ^[1]; Tanaka, Tooru ^[2]; Guo, Qixin ^[3]; Nishio, Mitsuhiro ^[2]

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1. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
2. Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan)
3. Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)

This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E{sub −} conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E{sub +} and the E{sub −} conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.

• OSTI ID: 22253207
• Journal Information: Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
AUGMENTATION
CARRIER LIFETIME
ELECTRONS
PHOTOLUMINESCENCE
RECOMBINATION
RED SHIFT
RELAXATION
SPECTROSCOPY
TIME RESOLUTION
ZINC TELLURIDES