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Title: Radiative cooling of bulk silicon by incoherent light pump

In contrast to radiative cooling by light up conversion caused exclusively by a low-entropy laser pump and employing thermally assisted fluorescence/luminescence as a power out, we demonstrate light down conversion cooling by incoherent pumps, 0.47–0.94 μm light emitting diodes, and employing thermal emission (TE) as a power out. We demonstrate ≤3.5 K bulk cooling of Si at 450 K because overall energy of multiple below bandgap TE photons exceeds the energy of a single above bandgap pump photon. We show that using large entropy TE as power out helps avoid careful tuning of an incoherent pump wavelength and cool indirect-bandgap semiconductors.
Authors:
; ;  [1]
  1. V. E. Lashkaryov Institute of Semiconductor Physics, 03028 Kiev (Ukraine)
Publication Date:
OSTI Identifier:
22253201
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ENTROPY; FLUORESCENCE; LIGHT EMITTING DIODES; PHOTONS; RADIATIVE COOLING; SEMICONDUCTOR MATERIALS; SILICON