Radiative cooling of bulk silicon by incoherent light pump

Journal Article · Mon Dec 23 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4855395· OSTI ID:22253201

Bogatyrenko, V. V.; Malyutenko, O. Yu. ^[1]

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1. V. E. Lashkaryov Institute of Semiconductor Physics, 03028 Kiev (Ukraine)

In contrast to radiative cooling by light up conversion caused exclusively by a low-entropy laser pump and employing thermally assisted fluorescence/luminescence as a power out, we demonstrate light down conversion cooling by incoherent pumps, 0.47–0.94 μm light emitting diodes, and employing thermal emission (TE) as a power out. We demonstrate ≤3.5 K bulk cooling of Si at 450 K because overall energy of multiple below bandgap TE photons exceeds the energy of a single above bandgap pump photon. We show that using large entropy TE as power out helps avoid careful tuning of an incoherent pump wavelength and cool indirect-bandgap semiconductors.

• OSTI ID: 22253201
• Journal Information: Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ENTROPY
FLUORESCENCE
LIGHT EMITTING DIODES
PHOTONS
RADIATIVE COOLING
SEMICONDUCTOR MATERIALS
SILICON