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Title: Magnetic manipulation by resistance switching in CeO{sub 2}/PrBa{sub 2}Cu{sub 3}O{sub 7−δ}/Pt heterostructure: The role of oxygen vacancies

Pronounced bipolar resistance switching with a good retention property has been observed in CeO{sub 2}/PrBa{sub 2}Cu{sub 3}O{sub 7−δ}/Pt heterostructure. The low resistance state and high resistance state exhibited distinguished ferromagnetic signals, as compared to the nearly non-magnetic initial state. It is found that the migration of the oxygen vacancies under electric field is mainly responsible for the electric and the magnetic changes. The modified interfacial electronic structure by the oxygen vacancy migration and the trapping/detrapping of the carriers leads to the resistance switching. The exchange interaction of the hydrogen-like orbitals formed around the singly occupied oxygen vacancies in CeO{sub 2} is accounting for the emerged and modulated ferromagnetic signals. Temperature dependence of resistance in the low resistance state follows a variable range hopping law, further confirming that the amount of oxygen vacancies in the CeO{sub 2} layer directly affects the hydrogen-like orbital radius, which determines the strength of the ferromagnetic coupling.
Authors:
; ; ; ; ; ; ; ; ; ;  [1] ;  [1] ;  [2]
  1. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22253149
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIERS; CERIUM OXIDES; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; EXCHANGE INTERACTIONS; HYDROGEN; LAYERS; MIGRATION; OXYGEN; SIGNALS; TEMPERATURE DEPENDENCE; VACANCIES