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Title: Temperature dependence of the band gap of GaSb{sub 1−x}Bi{sub x} alloys with 0 < x ≤ 0.042 determined by photoreflectance

GaSb{sub 1−x}Bi{sub x} layers with 0 < x ≤ 0.042 have been studied by photoreflectance in 15–290 K temperature range. We found that due to the incorporation of Bi atoms into the GaSb host, the E{sub 0} band gap-related transition redshifts (∼30 meV per 1% Bi) and significantly broadens. The shift of the E{sub 0} transition in the temperature range 10–270 K has been found to be ∼70 meV, very similar to the energy shift in GaSb over the same temperature range. We analyzed the energy and broadening of the E{sub 0} transition using the Varshni and Bose-Einstein formulas and found that the Varshni and Bose-Einstein parameters of GaSb{sub 1−x}Bi{sub x} are similar to those of GaSb. Moreover we concluded that the inhomogeneities in GaSb{sub 1−x}Bi{sub x} alloys is less important than in dilute bismide arsenides since Bi atoms are more similar to Sb atoms (in electronegativities and ionic sizes)
Authors:
;  [1] ;  [1] ;  [2] ; ; ;  [3] ;  [4] ; ;  [5]
  1. Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)
  2. (United States)
  3. Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF (United Kingdom)
  4. Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
  5. Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom)
Publication Date:
OSTI Identifier:
22253142
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; ARSENIDES; ATOMS; ELECTRONEGATIVITY; GALLIUM ANTIMONIDES; RED SHIFT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE