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Title: Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10{sup -5} Ω·cm{sup 2} was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni{sub 3}Si to Ni{sub 2}Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.
Authors:
;  [1] ;  [2] ; ; ; ; ;  [1]
  1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22253080
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 4; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ELECTRICAL PROPERTIES; MICROSTRUCTURE; RAMAN SPECTROSCOPY; SILICIDES; SILICON CARBIDES; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM COMPOUNDS; X-RAY DIFFRACTION