skip to main content

SciTech ConnectSciTech Connect

Title: Synthesis, characterization and electrostatic properties of WS{sub 2} nanostructures

We report the direct growth of atomically thin WS{sub 2} nanoplates and nanofilms on the SiO{sub 2}/Si (300 nm) substrate by vapor phase deposition method without any catalyst. The WS{sub 2} nanostructures were systematically characterized by optical microscopy, scanning electron microscopy, Raman microscopy and atomic force microscopy. We found that growth time and growth temperature play important roles in the morphology of WS{sub 2} nanostructures. Moreover, by using Kelvin probe force microscopy, we found that the WS{sub 2} nanoplates exhibit uniform surface and charge distributions less than 10 mV fluctuations. Our results may apply to the study of other transition metal dichalcogenides by vapor phase deposition method.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22252906
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; CATALYSTS; DEPOSITION; NANOSTRUCTURES; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; SUBSTRATES; SURFACES; SYNTHESIS; TUNGSTEN SULFIDES