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Title: Injected-charge-driven increase in electro-optic effect of KTN crystals

We report a significant increase in the electro-optic (EO) effect of KTa{sub x}Nb{sub 1-x}O{sub 3} (KTN) crystals that we achieved by injecting carriers into them. The dielectric constant of KTN was increased approximately twofold by carrier injection. The EO beam scanning performance was effectively improved by the increase in the EO effect resulting from the increased dielectric constant. The estimated densities of the trapped electrons were as small as 5.8 × 10{sup 20}m{sup -3}. The very small quantity of injected electrons greatly affected the dielectric constant and EO effect of the KTN crystals.
Authors:
; ; ; ; ;  [1]
  1. NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)
Publication Date:
OSTI Identifier:
22252876
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALS; DENSITY; PERMITTIVITY; TRAPPED ELECTRONS