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Title: Ferromagnetism in undoped One-dimensional GaN Nanowires

We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ∼0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup −8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.
Authors:
;  [1] ;  [2] ;  [3]
  1. Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli - 620 024 (India)
  2. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)
  3. Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli – 620 024 (India)
Publication Date:
OSTI Identifier:
22252807
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CATALYSTS; DEFECTS; FERROMAGNETISM; GALLIUM; GALLIUM NITRIDES; HYSTERESIS; MAGNETIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WIRES