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Title: Low-pressure plasma-etching of bulk polymer materials using gas mixture of CF{sub 4} and O{sub 2}

In this study, we have proposed a low-pressure reactive ion etching of bulk polymer materials with a gas mixture of CF{sub 4} and O{sub 2}, and have achieved precise fabrication of poly(methyl methacrylate) (PMMA) and perfluoroalkoxy (PFA) bulk polymer plates with high-aspect-ratio and narrow gap array structures, such as, pillar, frustum, or cone, on a nano/micro scale. The effects of the etching conditions on the shape and size of each pillar were evaluated by changing etching duration and the size/material of etching mask. The fabricated PMMA array structures indicate possibilities of optical waveguide and nanofiber array. PFA cone array structures showed super-hydrophobicity without any chemical treatments. Also, polystyrene-coated silica spheres were used as an etching mask for the pillar array structure formation to control the gap between pillars.
Authors:
 [1] ;  [2] ; ;  [1] ;  [3] ;  [4] ;  [3] ;  [2] ;  [5]
  1. Department of Applied Chemistry and Biotechnology, Graduate School of Engineering, Chiba University, Chiba, 263-8522 (Japan)
  2. (Japan)
  3. Tateyama Machine Co. Ltd., Toyama, 930-1305 (Japan)
  4. Tateyama Kagaku Industry Co. Ltd., Toyama, 930-1305 (Japan)
  5. Department of Mechanical and Production Engineering, Graduate School of Science and Technology, Niigata University, Niigata, 950-2181 (Japan)
Publication Date:
OSTI Identifier:
22251948
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 3; Journal Issue: 11; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON TETRAFLUORIDE; ETCHING; METHACRYLIC ACID ESTERS; MIXTURES; PLASMA; PMMA; POLYSTYRENE; SILICA