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Title: Growth of graphene underlayers by chemical vapor deposition

Abstract

We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

Authors:
; ; ; ; ;  [1];  [2]
  1. Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa)
  2. Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)
Publication Date:
OSTI Identifier:
22251829
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 3; Journal Issue: 11; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CATALYSTS; CHEMICAL VAPOR DEPOSITION; COPPER; FIELD EMISSION; GLASS; GRAPHENE; LAYERS; METHACRYLIC ACID ESTERS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES

Citation Formats

Fabiane, Mopeli, Khamlich, Saleh, Bello, Abdulhakeem, Dangbegnon, Julien, Momodu, Damilola, Manyala, Ncholu, and Charlie Johnson, A. T. Growth of graphene underlayers by chemical vapor deposition. United States: N. p., 2013. Web. doi:10.1063/1.4834975.
Fabiane, Mopeli, Khamlich, Saleh, Bello, Abdulhakeem, Dangbegnon, Julien, Momodu, Damilola, Manyala, Ncholu, & Charlie Johnson, A. T. Growth of graphene underlayers by chemical vapor deposition. United States. https://doi.org/10.1063/1.4834975
Fabiane, Mopeli, Khamlich, Saleh, Bello, Abdulhakeem, Dangbegnon, Julien, Momodu, Damilola, Manyala, Ncholu, and Charlie Johnson, A. T. 2013. "Growth of graphene underlayers by chemical vapor deposition". United States. https://doi.org/10.1063/1.4834975.
@article{osti_22251829,
title = {Growth of graphene underlayers by chemical vapor deposition},
author = {Fabiane, Mopeli and Khamlich, Saleh and Bello, Abdulhakeem and Dangbegnon, Julien and Momodu, Damilola and Manyala, Ncholu and Charlie Johnson, A. T.},
abstractNote = {We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.},
doi = {10.1063/1.4834975},
url = {https://www.osti.gov/biblio/22251829}, journal = {AIP Advances},
issn = {2158-3226},
number = 11,
volume = 3,
place = {United States},
year = {Fri Nov 15 00:00:00 EST 2013},
month = {Fri Nov 15 00:00:00 EST 2013}
}